4v drive nch mosfet RSD050N06 ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 3) parallel use is easy. ? applications switching ? packaging specifications ? inner circuit package cpt3 code tl basic ordering unit (pieces) 2500 ? absolute maximum ratings (t a =25c) symbol limits unit drain-source voltage v dss 60 v gate-source voltage v gss ? 20 v continuous i d ? 5.0 a pulsed i dp ? 15 a continuous i s 5.0 a pulsed i sp 15 a power dissipation p d 15 w channel temperature t ch 150 c range of storage temperature t stg ? 55 to +150 c *1 pw ? 10 ? s, duty cycle ? 1% *2 t c =25c ? thermal resistance symbol limits unit channel to case r th (ch-c) 8.33 c / w * t c =25 ? c parameter type source current (body diode) drain current parameter *1 *1 * cpt3 (sc-63) y ? ? ? e ? e ? y ? ? ? e ? t ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?05 ? ? ? *1 *2 (1) gate (2) drain (3) source ? 1 esd protection diode ? 2 body diode ?2 ?1 (1) (2) (3) *1 *1 *2 1/6 2011.02 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSD050N06 ? electrical characteristics (t a =25c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 60 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =60v, v gs =0v gate threshold voltage v gs (th) 1.0 - 3.0 v v ds =10v, i d =1ma - 78 109 i d =5.0a, v gs =10v - 94 131 i d =5.0a, v gs =4.5v - 100 140 i d =5.0a, v gs =4.0v forward transfer admittance l y fs l 3.5 - - s i d =5.0a, v ds =10v input capacitance c iss - 290 - pf v ds =10v output capacitance c oss - 90 - pf v gs =0v reverse transfer capacitance c rss - 35 - pf f=1mhz turn-on delay time t d(on) -8-nsi d =2.5a, v dd 30v rise time t r - 17 - ns v gs =10v turn-off delay time t d(off) - 26 - ns r l =12 ? fall time t f -8-nsr g =10 ? total gate charge q g - 8.0 - nc v dd 30v gate-source charge q gs - 1.4 - nc i d =5.0a gate-drain charge q gd - 1.4 - nc v gs =10v *pulsed ? body diode characteristics (source-drain) (t a =25c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =5.0a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD050N06 ? electrical characteristic curves (ta=25 ? c) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) t a =25 c pulsed v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.0v 0.0 2.5 5.0 7.5 10.0 12.5 15.0 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =4.0v v gs =4.5v v gs =3.5v v gs =3.0v t a =25 c pulsed 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs =4.0v v gs =4.5v v gs =10v t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =4.5v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 1 10 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs =4.0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 3/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD050N06 0.01 0.1 1 10 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.00001 0.0001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : i d [a] gate - source voltage : v gs [v] fig.8 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.0001 0.001 0.01 0.1 1 10 0.0 0.5 1.0 source current : is [a] source - drain voltage : v sd [v] fif.9 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 500 1000 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d =5.0a i d =2.5a t a =25 c pulsed 1 10 100 1000 0.01 0.1 1 10 switching time : t [ns] drain current : i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P 30v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 12 0 2 4 6 8 10 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.12 dynamic input characteristics t a =25 c v dd =30v i d =5a pulsed 4/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD050N06 10 100 1000 0.01 0.1 1 10 100 capacitance : c [pf] drain - source voltage : v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 100 0.1 1 10 100 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t c =25 c single pulse operation in this area is limited by r ds(on) v gs = 10v p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.15 normalized transient thermal resistance v.s. pulse width t c =25 c single pulse rth (ch - a) =8.33 c /w rth (ch - a) (t)=r(t) rth (ch - a) 5/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSD050N06 ? measurement circuits v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.02 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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